Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics

Viktor Sverdlov

Softcover reprint of the original 1st Edition 2011

Paperback (23 Aug 2016)

$171.79

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New: Hardback (24 Nov 2010) - 2011 ~~RRP $203.57~~ $188.50

Publisher's Synopsis

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

Book information

ISBN:	9783709119334
Publisher:	Springer Vienna
Imprint:	Springer
Pub date:	23 Aug 2016
Edition:	Softcover reprint of the original 1st Edition 2011
Language:	English
Number of pages:	252
Weight:	459g
Height:	240mm
Width:	168mm
Spine width:	14mm