Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics

Viktor Sverdlov

2011

Hardback (24 Nov 2010)

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Publisher's Synopsis

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

Book information

ISBN:	9783709103814
Publisher:	Springer Vienna
Imprint:	Springer
Pub date:	24 Nov 2010
Edition:	2011
Language:	English
Number of pages:	252
Weight:	631g
Height:	244mm
Width:	170mm
Spine width:	15mm