Publisher's Synopsis
As SiC and GaN devices are increasingly being applied in power electronics, the excellent performance of these devices is required. Therefore, how to design the devices, how to drive them, and what other fields these devices can be applied in are attractive research issues.(2) This Special Issue aims to exhibit the research progress of the application of wide-bandgap semiconductor devices, including the novel structures of devices, new topology of circuits for the high performance of wide-bandgap devices, and integrated circuit application of wide-bandgap semiconductors.(3) In this Special Issue, original research articles and reviews are presented. Research areas are the following: high-efficiency SiC MOSFET-based DC/DC converters for EV applications, high-voltage SiC-based DC/DC converters for HVDC applications, SiC-based AC/DC for EV charging station applications, high-power density power converters based on GaN devices, integrated circuits based on SiC material for harsh environment applications, and integrated circuits based on GaN material for high-frequency applications.
