Publisher's Synopsis
This volume contains the majority of papers presented at the symposium 'Thin Films Epitaxial Growth and Nanostructures', which was held as Symposium D of the E-MRS Spring Meeting 1998 in Strasbourg on June 16th-19th 1998. Nanometer structures attract high scientific and technological attention by tailoring material properties artificially. Epitaxial growth is a very promising way to produce low-dimensional structures (two-, one-, zero-dimensional) with nanometer dimensions for a variety of materials. This symposium focussed on semiconducting films, on a basic understanding of interface formation and on formation of nanostructures and on microelectronic applications. It provided a forum for discussions of common aspects among researchers working on compound semiconductors and silicon based heterostructures.;Topics treated in this symposium included microscopic description and observation of growth, influence of strain on surface morphology and defect structure, growth on patterned substrates, self assembly of nanostructures, electronic and optoelectronic devices requiring nanometer layers and atomically sharp interfaces, new device concepts and circuit architectures, alternative methods and systems.
