Publisher's Synopsis
Surface and interface studies have developed significantly in recent years, making a profound impact on science and industrial innovation. Current progress in electronic and optical propperties of semiconductor surfaces is summarized by L.J. Sham. Z. Zhang details the properties of adsorbed SI on Si(1000) surfaces. L.C. Feldman focuses on silicon epitaxy and surfaces. Lattice strain in heteroepitaxial layers is discussed by S.Y. Yao. Finally, state of the art techniques of field ion microscopy and photoelectron diffraction are presented by T. Tsong and S.Y. Tong respectively.
