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Strained Silicon Heterostructures

Strained Silicon Heterostructures Materials and Devices - IEE Circuits, Devices and Systems Series

Hardback (23 Nov 2001)

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Publisher's Synopsis

This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.

Book information

ISBN: 9780852967782
Publisher: The Institution of Engineering and Technology
Imprint: Institution of Engineering and Technology
Pub date:
DEWEY: 621.38152
DEWEY edition: 21
Language: English
Number of pages: 496
Weight: 884g
Height: 234mm
Width: 156mm
Spine width: 31mm