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Silicon Carbide and Related Materials 2003

Silicon Carbide and Related Materials 2003 ICSCRM2003 : Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 - Materials Science Forum

Paperback (06 Jun 2004)

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Publisher's Synopsis

Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Book information

ISBN: 9780878499434
Publisher: Trans Tech Publications Ltd
Imprint: Trans Tech Publications
Pub date:
DEWEY: 621.38152
DEWEY edition: 22
Language: English
Weight: 3311g
Height: 260mm
Width: 184mm
Spine width: 107mm