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Silicon Carbide 2002--Materials, Processing, and Devices : Symposium Held December 2-4, 2002, Boston, Massachusetts, U.S.A

Silicon Carbide 2002--Materials, Processing, and Devices : Symposium Held December 2-4, 2002, Boston, Massachusetts, U.S.A - Materials Research Society Symposium Proceedings

Hardback (25 Mar 2003)

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Publisher's Synopsis

Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.

Book information

ISBN: 9781558996793
Publisher: Materials Research Society
Imprint: Materials Research Society
Pub date:
DEWEY: 621.38152
DEWEY edition: 22
Language: English
Number of pages: 404
Weight: 659g
Height: 236mm
Width: 157mm
Spine width: 25mm