Publisher's Synopsis
The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, "surfactants"; analysis, both in situ and ex situ; strain adjustment methods; high quality buffers; modification of material properties by quantum wells and superlattices; and devices, such as novel concepts, processing, modelling and demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, should provide a wealth of information for all those interested in the future avenues of theory and applications in this field.
