Publisher's Synopsis
A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a plurality of fins on the semiconductor substrate; forming a plurality of gate structures on the plurality of fins and sidewall spacers on side surfaces of the gate structures; forming a first dielectric layer on the semiconductor substrate; recessing the gate structures to form a plurality of trenches on top surfaces of the gate structures; forming a mask material layer filling the trenches and on the first dielectric layer; forming a protective layer on the top surfaces of the remaining gate structures and a mask layer on a portion of the first dielectric layer between adjacent gate structures by etching the mask material layer; forming contact through-holes in the first dielectric layer between adjacent gates structure at both sides of the mask layer; and forming a metal contact via in each of the contact through-holes.
