Publisher's Synopsis
The research and development of high electron mobility transistors (HEMTs) have made major contributions to epitaxial growth techniques and these improved techniques have enabled the fabrication of semi-conductor hetero-structures with precisely controlled hetero-interfaces. This, in turn, has triggered the development of other devices, such as resonant tunneling devices, that use quantum mechanical effects. This tract examines the fundamentals of these heterostructure devices and their applications. In Part 1, the physical principles and operational characteristics of HEMTs are described and their analogue and digital applications are covered. Part 2 considers a resonant tunneling hot electron transistor (RHET), a resonant tunneling bipolar transistor (RBT), and recent advances in technology using InGaAs-based materials. In addition, the microwave characteristics of these resonant tunneling devices are explained.
