Delivery included to the United States

Power Semiconductor Materials and Devices: Volume 483

Power Semiconductor Materials and Devices: Volume 483 - MRS Proceedings

Paperback (05 Jun 2014)

Not available for sale

Out of stock

This service is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Publisher's Synopsis

IInnovative silicon concepts and nonsilicon materials such as SiC, diamond and group-III nitrides are finding interest for new generations of electronic devices operational at much higher voltages and temperatures than conventional lower-power transistors and integrated circuits. Improved bulk and epitaxial growth, processing, device design and circuit architecture, bonding, testing and packaging are all necessary for realization of new applications. It seems clear that Si will continue to dominate most power electronics applications for the next decade, while SiC is by far the most mature of the newer materials technologies. The group-III nitrides are also extremely attractive because of their excellent transport properties and the availability of heterostructures. It is likely that hybrid GaN/SiC devices will have a role due to the need for high thermal conductivity substrates for thermal management. Diamond appears to be trailing because of the inability to dope with donor impurities, although in principle, its properties are probably better suited to high-temperature applications than many other materials.

About the Publisher

Cambridge University Press

Cambridge University Press dates from 1534 and is part of the University of Cambridge. We further the University's mission by disseminating knowledge in the pursuit of education, learning and research at the highest international levels of excellence.

Book information

ISBN: 9781107413412
Publisher: Cambridge University Press
Imprint: Cambridge University Press
Pub date:
Language: English
Number of pages: 476
Weight: 630g
Height: 229mm
Width: 152mm
Spine width: 24mm