Publisher's Synopsis
PROJECT ON Elements of Modern Physics
Ion implantation is a common technique used in the semiconductor industry for introducing dopants into a substrate to alter its electrical and physical properties. The success of this technique depends on the accurate modeling of the ion implantation process. SRIM (Stopping and Range of Ions in Matter) is a widely used simulation software for predicting ion implantation behavior in materials. In this project, we will use SRIM to simulate the ion implantation process and analyze its effects on a silicon substrate.IRADINA SOFTWARE also used for Ion implantation.
