Publisher's Synopsis
Symposium Q, 'New Functional Materials and Emerging Device Architectures for Nonvolatile Memories', held April 25−29 at the 2011 MRS Spring Meeting in San Francisco, California, was a follow up of a previous series of related symposia on nonvolatile memories at MRS annual meetings. The high attendance and large number of papers submitted indicate continuing strong international interest and research efforts in the field of emerging new nonvolatile memory materials. Main areas of research featured in this symposium were advanced flash memories, phase change memories and resistive switching memories. In addition, ferroelectric memories, organic memories and new emerging memories remained of interest. With international contributions from universities, research centers and industry, this volume reflects the recent advances in material science and their influence on the memory technologies addressed in this symposium.
