Publisher's Synopsis
Bringing together researchers from twenty-five countries, Narrow Gap Semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors discusses the recent advances and discoveries in the science and technology of narrow gap semiconductors (NGS). In particular, it explores the latest findings in the fundamental physics of narrow gap materials and quantum heterostructures as well as device physics, including mid- and far-infrared lasers, detectors, and spintronic devices. This volume forms a solid presentation in several important areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. It examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe. Several chapters cover carbon nanotubes and spintronics, along with spin-orbit coupling, nonparabolicity, and large g-factors. The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges. Continuing the high-quality tradition of this series, Narrow Gap Semiconductors covers all aspects of NGS to offer an authoritative, well-balanced perspective of this evolving field.
