Publisher's Synopsis
This book has been substantially revised, expanded and updated from the first edition: only the introduction, concerning the basic physics, remains unchanged. The contents cover the theory, design and applications of gallium arsenide and related III-V compound field effect transistors. Most emphasis is placed on the GaAs metal semiconductor Schottky barrier FET and its role in microwave circuits. However, chapters are also devoted to other active devices such as high electron mobility transistors on AlGaAs together with extensive treatments on microwave and digital integrated circuits. Each chapter contains a number of examples illustrating theoretical approaches or applications.
