Publisher's Synopsis
All aspects of nitride semiconductor systems and related materials are presented in these proceedings of the Fourth International Conference on Nitride Semiconductors (ICNS–4). Active nitride researchers present their latest results on all aspects of nitride semiconductor systems, which include compounds involving AlInGaN, GaNAsP, AlSiCN and other materials containing nitrogen as one of the major constituents. The authors cover scientific and technological developments associated with these materials, their processing and devices; for technological areas such as optoelectronics, high temperature electronics, etc.
ICNS–4 is held in Denver, Colorado, in 2001 and follows the ICNS–1 held in Boston and Nagoya (1995); ICNS–2 in Tokushima, Japan; and ICNS–3 in Montpellier, France (1999).
The topical areas included are as follows:
– Synthesis (substrates, precursors, bulk crystals, epitaxy, doping, heterostructures, regrowht, alloys)
– Fundamental Science (band structure, modeling of physical properties, quantum size effect, strain effect, surface phenomena)
– Characterization (determination of the structural, electrical, optical, etc. properties)
– Processing (etching (dry, wet), cleaving, high reflection coatings, ohmic, contacts, Schottky contacts)
– Devices (optoelectronics, high power, and high temperature, applications)
