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High-Mobility Group-IV Materials and Devices: Volume 809

High-Mobility Group-IV Materials and Devices: Volume 809 - MRS Proceedings

Paperback (05 Jun 2014)

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Publisher's Synopsis

In the ever more-demanding quest for increased performance in the microelectronics industry, device concepts such as fully depleted SOI MOSFETs and multiple-gate structures are probably the last step in plain Si technology. In order to keep pace with Moore's law, materials that show enhanced carrier mobilities for both holes and electrons are needed in order to enhance drive in both low-power and high-performance MOS applications. It is clear that the semiconductor community is considering the use of strained layers of SiGe and Si in their most advanced MOS device concepts. This book, first published in 2004, brings together researchers interested in strained SiGe, strain-relaxed buffers, strained Si on bulk Si and on SOI, SiGe on SOI, Ge substrates, and Ge on insulator. Topics include: strained Si and SRBs on bulk Si; strained Si and SRBs on insulator; characterization and defects in strained layers; Ge substrates; strained Si and SiGe devices; doping and diffusion on Group-IV materials; and SiGe layers and high-k and high-mobility substrates.

About the Publisher

Cambridge University Press

Cambridge University Press dates from 1534 and is part of the University of Cambridge. We further the University's mission by disseminating knowledge in the pursuit of education, learning and research at the highest international levels of excellence.

Book information

ISBN: 9781107409248
Publisher: Materials Research Society
Imprint: Cambridge University Press
Pub date:
Language: English
Number of pages: 322
Weight: 430g
Height: 229mm
Width: 152mm
Spine width: 17mm