Publisher's Synopsis
The purpose of this book is twofold: firstly, to summarize the present electrical-measurement data in GaAs materials and devices; and secondly to describe in detail the techniques used to obtain these data, including in most cases the theoretical basis of these techniques. This latter emphasis will greatly enhance the reader's understanding of the presented data and, moreover, his or her ability to enter the field and contribute.;The range of topics covered in the book reflects those shown to have been most useful in the author's extensive research. Special emphasis is given to subjects which are sometimes neglected in other works, such as impurity and defect Fermi functions, degeneracy factors, and multi-band conduction, and also to subjects which are relatively new, such as the application of magnetoresistance to determine carrier mobility in device structures. Some of the information is very practical, eg, how to make ohmic contacts, or where to buy a commercial, automated Hall-effect apparatus.;Electrical Measurements in GaAs Materials and Devices provides a cross between a reference work and a textbook, and, in fact, could be well used for a one-term course on the electrical characterization of semiconductors, or as a strong supplementary text for a course on semiconductor physics. Many of the derivations are detailed, but the longer ones are relegated to appendices, in order to make the text more readable for those not interested in the mathematics.
