Publisher's Synopsis
the major interests of semiconductor device manufacturers is yield. In many cases this critical parameter can be directly related to material uniformity. Uniformity is important at all stages of processing, from substrate procurement to device fabrication. Mapping of non-uniformities in semiconductors has resulted in the development of specialized techniques - the subjects of the DRIP conference series. Like its predecessors, the fourth conference in the DRIP series brought together a group of international experts in uniformity assessment and mapping for a successful exchange of information and ideas. The central theme of the meeting reflected the current need to recognize defects in semiconductor materials during the large scale production of devices ranging from light emitting diodes to microwave integrated circuits. Topics such as the quality of epitaxial growth, yields of integrated circuits and the imaging of non-uniformities were discussed in detail. The refereed proceedings of this important, topical conference have been brought together in this volume providing a thorough account of the latest developments in this exciting area of semiconductor research. The papers presented here are reprinted from Semiconductor Science and Technology (1992, Volume 7, Number 1A), an Institute of Physics journal.
