Publisher's Synopsis
DRIP 5 was the fifth conference devoted to furthering the understanding of defect inhomogeneities in semiconductors and devices. The aim is to improve defect recognition so that structural inhomogeneities in both as-grown and processed semiconductors can be related to device performance.
Special emphasis is given to mapping and microscopic observation before and after processing to aid understanding of defect generation and the effect of defects on the reproducibility, reliability and yield of devices.
A valuable reference for researchers in electrical and electronic engineering and physics looking at the effects of defects on device performance.
