Publisher's Synopsis
For nearly half a century semiconductors have been a part of the most rapidly evolving and the most influential of technologies. The level of invention and of its assimilation remains high. The articles reprinted in this volume provide an overview of modern semiconductor physics. They were originally published in Journal of Physics C: Solid State Physics and are collated together in one volume to give researchers a comprehensive understanding of current activities in their field. A M Stoneham has written an introduction which provides a background for the articles and the authors were given the opportunity to add comments and new references. The subjects covered are ionicity in solids, the credibility of different calculational schemes for defects in semiconductors, new aspects of the oxygen donor in gallium phosphide, irradiation-induced defects in gallium arsenide and transition metal impurities in III-V compounds.
