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CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications: Volume 1155

CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications: Volume 1155 - MRS Proceedings

Paperback (06 May 2014)

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Publisher's Synopsis

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

About the Publisher

Cambridge University Press

Cambridge University Press dates from 1534 and is part of the University of Cambridge. We further the University's mission by disseminating knowledge in the pursuit of education, learning and research at the highest international levels of excellence.

Book information

ISBN: 9781107408326
Publisher: Cambridge University Press
Imprint: Cambridge University Press
Pub date:
Language: English
Number of pages: 194
Weight: 270g
Height: 229mm
Width: 152mm
Spine width: 10mm