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C, H, N, and O in Si and Characterization and Simulation of Materials and Processes

C, H, N, and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Other Elemental Semiconductors, and Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes of the E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995 - European Materials Research Society Symposia Proceedings

Book (31 Jul 1996)

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Publisher's Synopsis

This collection of symposia papers is divided into two sections. The first presents a state-of-the-art review of the topic - carbon, hydrogen, nitrogen, and oxygen in silicon and in other elemental superconductors. The second section deals with two areas: advanced instrumentation allowing for direct access to atomic mechanisms; and technological development, which, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturization race, a precise mastery of the microscopic mechanisms.

Book information

ISBN: 9780444824134
Publisher: North Holland/Elsevier
Imprint: North Holland/Elsevier
Pub date:
DEWEY: 621.38152011
DEWEY edition: 20
Language: English
Number of pages: 256
Weight: 0g
Height: 0mm
Width: 0mm