Publisher's Synopsis
The first chapter describes the next generation device Stacked Nanosheet, which has the potential to replace the three-dimensional transistor architecture, FinFET. The authors also present the recent progress in complementary metal-oxide-semiconductor technology. Recent biomimetic research examined in the next chapter may enable for a better understanding of biofiltration as well as potential technological applications via experimentation with novel materials, including 3D printed filters simulating natural systems. The possibility of using methane as an alternative and promising reducing agent in various metallurgical and chemical processes is discussed. Additionally, the electrochemical performances of transition-metal-disulfide-based electrodes fabricated from different configurations, including binary and ternary composites, is discussed. Following this, this compilation discusses the assumptions of the physics of transport in nano-scale wire Si pn-junction diodes with the aid of device simulations. An advanced theoretical model to predict current-voltage characteristics of nano-scale wire Si pn-junction diodes is proposed. The authors introduce several voltage contrast studies that have been done so far, introducing an experiment on active voltage contrast imaging of the cross-sectional surface of multilayer ceramic capacitors using helium ion microscopy. Next, the authors present a new two-stage method for the qualitative and quantitative detection method of hydrophobing injection media used as a subsequent masonry seal against rising damp. The aim of the final chapter is to review four classes of integer asymmetric codes and to illustrate their potential for use in modern short-range optical networks.
